Performance investigation of asymmetric double‐gate doping less tunnel FET with Si/Ge heterojunction
نویسندگان
چکیده
منابع مشابه
Drive current boosting of n-type tunnel FET with strained SiGe layer at source
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ژورنال
عنوان ژورنال: IET Circuits, Devices & Systems
سال: 2020
ISSN: 1751-858X,1751-8598
DOI: 10.1049/iet-cds.2019.0290